green product ordering option AO4702 and ao7402l are n-channel enhancement mode field AO4702 symbol units v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c w 22 junction and storage temperature range -55 to 150 -55 to 150 power dissipation p d 33 a 3.2 pulsed diode forward current b 30 schottky reverse voltage 30 continuous forward current a i f 4.4 a 9.3 pulsed drain current b 50 continuous drain current a i d 11 gate-source voltage 20 drain-source voltage 30 absolute maximum ratings t a =25c unless otherwise noted parameter mosfet schottky features v ds (v) = 30v i d = 11a (v gs = 10v) r ds(on) < 16m ? (v gs = 10v) r ds(on) < 25m ? (v gs = 4.5v) schottky vds (v) = 30v, if = 3a, vf<0.5v@1a the AO4702 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is packaged in parallel to improve device performance in synchronous recitification applications, or h-bridge configurations. standard product AO4702 is pb-free (meets rohs & sony 259 specifications). AO4702l is a electrically identical. soic-8 g s s s d d d d g d s a k effect transistor with schottky diode general description www.freescale.net.cn 1 / 5
AO4702 symbol typ max 31 40 59 75 r jl 16 24 symbol typ max 36 40 67 75 r jl 25 30 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w c/w maximum junction-to-ambient a steady-state thermal characteristics: schottky maximum junction-to-lead c steady-state c/w thermal characteristics: mosfet parameter units maximum junction-to-ambient a t 10s r ja c/w a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the schottky appears in parallel with the mosfet body diode, even though it is a separate chip. therefore, we provide the ne t forward drop, capacitance and recovery characteristics of the mosfet and schottky. however, the thermal resistance is specified for each chip separately. rev 5 : aug 2005 www.freescale.net.cn 2 / 5
AO4702 symbol min typ max units bv dss 30 v 0.007 0.05 3.2 10 12 20 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 40 a 13.4 16 t j =125c 16.8 21 20 25 m ? g fs 25 s v sd 0.45 0.5 v i s 5a c iss 1040 1250 pf c oss 212 pf c rss 121 pf r g 0.7 0.85 ? q g (10v) 19.8 24 nc q g (4.5v) 9.8 12 nc q gs 2.5 nc q gd 3.5 nc t d(on) 4.5 7 ns t r 3.9 7 ns t d(off) 17.4 30 ns t f 3.2 5.7 ns t rr 19 23 ns q rr 911nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. output capacitance (fet+schottky) body diode + schottky reverse recovery charge i f =11a, di/dt=100a/ s on state drain current v gs =4.5v, v ds =5v i f =11a, di/dt=100a/ s total gate charge gate source charge turn-on rise time turn-off delaytime gate resistance i dss ma gate threshold voltage body diode + schottky reverse recovery time v gs =0v, v ds =0v, f=1mhz v r =30v, t j =125c v r =30v, t j =150c v ds =v gs i d =250 a maximum body-diode + schottky continuous current input capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage zero gate voltage drain current (set by schottky leakage) gate-body leakage current i d =250 a, v gs =0v v r =30v v ds =0v, v gs = 20v r ds(on) static drain-source on-resistance forward transconductance diode + schottky forward voltage m ? v gs =4.5v, i d =8a i s =1a,v gs =0v v ds =5v, i d =11a v gs =10v, i d =11a turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =11a total gate charge gate drain charge reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters v gs =10v, v ds =15v, r l =1.35 ? , r gen =3 ? turn-off fall time a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the schottky appears in parallel with the mosfet body diode, even though it is a separate chip. therefore, we provide the ne t forward drop, capacitance and recovery characteristics of the mosfet and schottky. however, the thermal resistance is specified for each chip separately. rev 5: aug 2005 www.freescale.net.cn 3 / 5
AO4702 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 10 12 14 16 18 20 22 24 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5 v v gs =10v i d =11a 25c 125c i d =11a www.freescale.net.cn 4 / 5
AO4702 typical electrical and thermal characteristic s 0 2 4 6 8 10 048121620 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0.1s 1 s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =11a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le p uls e t j(max) =150c t a =25c 10 s www.freescale.net.cn 5 / 5
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